Di Sarno, Valentina (2016) Comb-assisted high-sensitivity spectroscopy of molecular buffer gas cooled beams. [Tesi di dottorato]

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Item Type: Tesi di dottorato
Resource language: English
Title: Comb-assisted high-sensitivity spectroscopy of molecular buffer gas cooled beams
Di Sarno, Valentinavalentinadisarno@alice.it
Date: 27 April 2016
Number of Pages: 93
Institution: Università degli Studi di Napoli Federico II
Department: Ingegneria Chimica, dei Materiali e della Produzione Industriale
Scuola di dottorato: Ingegneria industriale
Dottorato: Ingegneria dei materiali e delle strutture
Ciclo di dottorato: 28
Coordinatore del Corso di dottorato:
Mensitieri, Giuseppemensitie@unina.it
Mensitieri, GiuseppeUNSPECIFIED
Maddaloni, PasqualeUNSPECIFIED
Date: 27 April 2016
Number of Pages: 93
Keywords: buffer gas cooling, cavity ring down spectroscopy, cold molecules
Settori scientifico-disciplinari del MIUR: Area 09 - Ingegneria industriale e dell'informazione > ING-IND/22 - Scienza e tecnologia dei materiali
Additional information: cel. 3886537448
Date Deposited: 12 Apr 2016 23:55
Last Modified: 31 Oct 2016 11:00
URI: http://www.fedoa.unina.it/id/eprint/10926

Collection description

In this thesis, continuous-wave cavity ring-down spectroscopy of a partially hydrodynamic molecular beam emerging from a buffer-gas-cooling source is demonstrated. Specifically, the (v1+v3) vibrational overtone band of acetylene (C2H2) around 1.5 um is accessed using a narrow linewidth diode laser stabilized against a GPS-disciplined rubidium clock via an optical frequency comb synthesizer. As an example, the absolute frequency of the R(1) component is measured with a fractional accuracy of 4x10^(-9). Our approach represents the very first step towards the extension of more sophisticated spectroscopic interrogation schemes, including Ramsey's method of separated fields, to buffer-gas-cooled molecular beams. It could also provide a powerful tool for spectroscopic characterization of molecular beams used in the epitaxial growth of thin films. Molecular Beam Epitaxy (MBE) is one of the most important growth facilities to grow epitaxial semiconductor materials for semiconductor optoelectronic devices, such as lasers, emitting diodes, detectors, and modulators.


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