Di Sarno, Valentina (2016) Comb-assisted high-sensitivity spectroscopy of molecular buffer gas cooled beams. [Tesi di dottorato]
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| Item Type: | Tesi di dottorato |
|---|---|
| Resource language: | English |
| Title: | Comb-assisted high-sensitivity spectroscopy of molecular buffer gas cooled beams |
| Creators: | Creators Email Di Sarno, Valentina valentinadisarno@alice.it |
| Date: | 27 April 2016 |
| Number of Pages: | 93 |
| Institution: | Università degli Studi di Napoli Federico II |
| Department: | Ingegneria Chimica, dei Materiali e della Produzione Industriale |
| Scuola di dottorato: | Ingegneria industriale |
| Dottorato: | Ingegneria dei materiali e delle strutture |
| Ciclo di dottorato: | 28 |
| Coordinatore del Corso di dottorato: | nome email Mensitieri, Giuseppe mensitie@unina.it |
| Tutor: | nome email Mensitieri, Giuseppe UNSPECIFIED Maddaloni, Pasquale UNSPECIFIED |
| Date: | 27 April 2016 |
| Number of Pages: | 93 |
| Keywords: | buffer gas cooling, cavity ring down spectroscopy, cold molecules |
| Settori scientifico-disciplinari del MIUR: | Area 09 - Ingegneria industriale e dell'informazione > ING-IND/22 - Scienza e tecnologia dei materiali |
| Additional information: | cel. 3886537448 |
| Date Deposited: | 12 Apr 2016 23:55 |
| Last Modified: | 31 Oct 2016 11:00 |
| URI: | http://www.fedoa.unina.it/id/eprint/10926 |
Collection description
In this thesis, continuous-wave cavity ring-down spectroscopy of a partially hydrodynamic molecular beam emerging from a buffer-gas-cooling source is demonstrated. Specifically, the (v1+v3) vibrational overtone band of acetylene (C2H2) around 1.5 um is accessed using a narrow linewidth diode laser stabilized against a GPS-disciplined rubidium clock via an optical frequency comb synthesizer. As an example, the absolute frequency of the R(1) component is measured with a fractional accuracy of 4x10^(-9). Our approach represents the very first step towards the extension of more sophisticated spectroscopic interrogation schemes, including Ramsey's method of separated fields, to buffer-gas-cooled molecular beams. It could also provide a powerful tool for spectroscopic characterization of molecular beams used in the epitaxial growth of thin films. Molecular Beam Epitaxy (MBE) is one of the most important growth facilities to grow epitaxial semiconductor materials for semiconductor optoelectronic devices, such as lasers, emitting diodes, detectors, and modulators.
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