Cedergren, Karin (2008) Intrinsic Josephson pi-junctions for novel devices. [Tesi di dottorato] (Unpublished)

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Item Type: Tesi di dottorato
Resource language: English
Title: Intrinsic Josephson pi-junctions for novel devices
Creators:
CreatorsEmail
Cedergren, Karinkarin.cedergren@chalmers.se
Date: 1 December 2008
Number of Pages: 112
Institution: Università degli Studi di Napoli Federico II
Istituzioni (extra): INFM - Coherentia
Department: Scienze fisiche
Dottorato: Tecnologie innovative per materiali, sensori ed imaging
Ciclo di dottorato: 20
Coordinatore del Corso di dottorato:
nomeemail
Abbate, GiancarloUNSPECIFIED
Tutor:
nomeemail
Tafuri, FrancescoUNSPECIFIED
Lombardi, FlorianaUNSPECIFIED
Date: 1 December 2008
Number of Pages: 112
Keywords: Josephson HTS d-wave grain-boundary biepitaxial
Settori scientifico-disciplinari del MIUR: Area 02 - Scienze fisiche > FIS/03 - Fisica della materia
Area 02 - Scienze fisiche > FIS/01 - Fisica sperimentale
Date Deposited: 18 Nov 2009 09:53
Last Modified: 19 Jan 2015 11:54
URI: http://www.fedoa.unina.it/id/eprint/3461
DOI: 10.6092/UNINA/FEDOA/3461

Collection description

The properties of YBCO grain boundary Josephson junctions have been studied experimentally. Due to the d-wave symmetry of the order parameter of YBCO it is possible to have junctions with a 0-π phase discontinuity along the barrier profile. Such 0-π-junctions can have a ground state where spontaneous flux is generated at the discontinuity point. This work has been focused on understanding if it is possible to fabricate biepitaxial grain boundary 0-π-junctions that, despite the unavoidable faceting along the grain boundary line, can have a ground state with spontaneously generated flux. The interest in the biepitaxial technique lies in its flexibility for circuit design. The microstructure and transport properties of the grain boundary junctions have been studied in details. Scanning SQUID Microscope imaging has revealed the presence of spontaneous flux in our junctions. Finally the dynamics of 0-π-junctions compared to conventional 0-junctions have been studied and compared to simulation.

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