Bloisi, Francesco and Cassinese, Antonio and Vicari, Luciano Rosario Maria (2009) Photoinduced long-term memory effects in n-type organic perylene transistors. [Pubblicazione in rivista scientifica]

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Tipologia del documento: Pubblicazione in rivista scientifica
Lingua: English
Titolo: Photoinduced long-term memory effects in n-type organic perylene transistors.
Autori:
AutoreEmail
Bloisi, Francesco[non definito]
Cassinese, Antonio[non definito]
Vicari, Luciano Rosario Maria[non definito]
Autore/i: BARRA M., BLOISI F., CASSINESE A., DI GIROLAMO F. V., VICARI L.
Data: 2009
Numero di pagine: 3
Dipartimento: Scienze fisiche
Numero identificativo: 10.1063/1.3272035
Titolo del periodico: JOURNAL OF APPLIED PHYSICS
Data: 2009
Volume: 106
Intervallo di pagine: 126105-1-126105-3
Numero di pagine: 3
Parole chiave: nanophotonics, organic electronics, organic field-effect transistors OTFT
Numero identificativo: 10.1063/1.3272035
Depositato il: 21 Ott 2010 06:57
Ultima modifica: 30 Apr 2014 19:43
URI: http://www.fedoa.unina.it/id/eprint/7512

Abstract

In this paper, the photoexcitation response of high mobility n-type organic field-effect transistors is analyzed. White light exposure of N,N_-dioctyl-3,4,9,10-perylene tetracarboxylic diimide _PTCDI-C8H_ transistors is demonstrated to promote the occurrence of metastable conductance states with very long retention times, similar to what has been previously reported for p-type compounds. Even in the absence of a gate-source voltage VGS, the complete recovery of the initial electrical condition can take up to 20 days. However, the initial state restoring is electrically controllable by the application of a positive VGS. These effects suggest that PTCDI-C8H is an interesting n-type material for the development of light-sensitive organic circuitry.

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