Realization and characterization of silicon nitride thin films embedding Si nanoparticles

Abstract

This thesis concerns the realization and characterization of silicon nitride thin films embedding Si nanoparticles. The objectives are: 1) to investigate convenient fabrication procedures in application perspective, 2) to improve upon the characterization techniques regarding this material class, and 3) to possibly provide a proof of concept study of quantum confinement to support the implementation of new-generation optoelectronic devices (among which, in particular, the all-silicon tandem solar cells). Different fabrication approaches have been followed: a simpler in-situ route by Plasma Enhanced Chemical Vapour Deposition and a procedure involving a post-deposition annealing step. The samples have been characterized through photoluminescence (at different excitation energies and temperatures), extensive Raman spectroscopy, FTIR, optical absorption, and EFTEM. The research activity has been carried out at ENEA - Portici Research Center in the “Photovoltaic Technologies Section” (now “Portici Technical Unit”).