Amoruso, Salvatore and Ausanio, Giovanni and Bruzzese, Riccardo and Wang, Xuan (2011) Ultrafast Laser Ablation and Deposition of Wide Band Gap Semiconductors. [Pubblicazione in rivista scientifica]
Il contenuto (Full text) non è disponibile all'interno di questo archivio.| Tipologia del documento: | Pubblicazione in rivista scientifica |
|---|---|
| Titolo: | Ultrafast Laser Ablation and Deposition of Wide Band Gap Semiconductors |
| Autori: | Autore Email Amoruso, Salvatore [non definito] Ausanio, Giovanni [non definito] Bruzzese, Riccardo [non definito] Wang, Xuan [non definito] |
| Autore/i: | Sanz, Mikel; Lopez-Arias, Marien; Marco, Jos F.; de Nalda, Rebeca; Lettieri, Stefano; Castillejo, Marta |
| Data: | 4 Febbraio 2011 |
| Numero di pagine: | 9 |
| Dipartimento: | Scienze fisiche |
| Sezione di dipartimento: | Struttura della Materia |
| Numero identificativo: | 10.1021/jp108489k |
| URL ufficiale: | http://pubs.acs.org/doi/abs/10.1021/jp108489k |
| Titolo del periodico: | Journal of Physical Chemistry C |
| Data: | 4 Febbraio 2011 |
| ISSN: | 1932-7447 |
| Volume: | 115 |
| Numero: | 8 |
| Intervallo di pagine: | pp. 3203-3211 |
| Numero di pagine: | 9 |
| Parole chiave: | Ultrafast laser ablation and Deposition; Semiconductor Nanoparticles; Nanoparticles-Assembled Films |
| Numero identificativo: | 10.1021/jp108489k |
| Settori scientifico-disciplinari del MIUR: | Area 02 - Scienze fisiche > FIS/02 - Fisica teorica, modelli e metodi matematici |
| Depositato il: | 01 Lug 2011 14:49 |
| Ultima modifica: | 30 Apr 2014 19:46 |
| URI: | http://www.fedoa.unina.it/id/eprint/8467 |
Abstract
Isolated nanoparticles of the wide band gap II−VI semiconductors CdS and ZnS were produced by ultrafast pulsed laser deposition using pulses of ≈300 fs at two wavelengths of 527 and 263 nm. Upon repetitive target irradiation, the isolated nanoparticles assemble to form a nanostructured film whose structural and chemical properties are compared to those of the targets. UV ablation at 263 nm yields nanoparticles of 5 nm average diameter in the case of CdS. At this wavelength the crystalline phase and stoichiometry of the films markedly differ from those of the target. At 527 nm the average size of the nanoparticles is larger, about 13 nm, but the deposits keep the structural and chemical characteristics of the target. For ZnS the size of the nanoparticles is larger than for CdS although their properties also resemble those of the target when they are produced upon irradiation in the visible. The results obtained allow discussion of the interplay between the light absorption step, the plume dynamics, and the film growth and their impact on the structure and nanometer morphology of the deposited material, while at the same time they exemplify the possibility of their control through the choice of the wavelength of the femtosecond pulses.
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