Maresca, Luca
(2013)
Design and verification of IGBTs rugged in forward and reverse conditions.
[Tesi di dottorato]
| Item Type: |
Tesi di dottorato
|
| Resource language: |
English |
| Title: |
Design and verification of IGBTs rugged in forward and reverse conditions |
| Creators: |
| Creators | Email |
|---|
| Maresca, Luca | luca.maresca@unina.it |
|
| Date: |
2 April 2013 |
| Number of Pages: |
180 |
| Institution: |
Università degli Studi di Napoli Federico II |
| Department: |
Ingegneria biomedica, elettronica e delle telecomunicazioni |
| Scuola di dottorato: |
Ingegneria dell'informazione |
| Dottorato: |
Ingegneria elettronica e delle telecomunicazioni |
| Ciclo di dottorato: |
25 |
| Coordinatore del Corso di dottorato: |
| nome | email |
|---|
| Rinaldi, Niccolò | nirinald@unina.it |
|
| Tutor: |
| nome | email |
|---|
| Irace, Andrea | a.irace@unina.it |
|
| Date: |
2 April 2013 |
| Number of Pages: |
180 |
| Keywords: |
Power Devices, IGBT, TCAD, Modeling, Avalanche Breakdown, Short-Circuit |
| Settori scientifico-disciplinari del MIUR: |
Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 - Elettronica |
| Aree tematiche (7° programma Quadro): |
TECNOLOGIE DELL'INFORMAZIONE E DELLA COMUNICAZIONE > Ambiente, energia e trasporti |
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| Date Deposited: |
09 Apr 2013 17:08 |
| Last Modified: |
23 Apr 2016 01:00 |
| URI: |
http://www.fedoa.unina.it/id/eprint/9323 |
Collection description
The enormous increase of applications based on the control of electrical power, due to their low impact on environment, has increased the demand of semiconductor power devices with high reliability and efficiency. IGBTs are the most used power semiconductor devices for Middle/High power applications. In this work the design parameters which affect the ruggedness of IGBTs in forward and reverse conditions are analyzed. By means of both theoretical, simulative and experimental approaches the trade off between the on-state performances (voltage drop, turn-OFF losses and short-circuit capability) are defined and the guidelines to improve the robustness in avalanche conditions are reported. The inner physics and the terminal waveforms for large area IGBTs in avalanche conditions are investigated as well, by means of TCAD simulations and experimental characterizations.
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