Maresca, Luca (2013) Design and verification of IGBTs rugged in forward and reverse conditions. [Tesi di dottorato]

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Item Type: Tesi di dottorato
Lingua: English
Title: Design and verification of IGBTs rugged in forward and reverse conditions
Creators:
CreatorsEmail
Maresca, Lucaluca.maresca@unina.it
Date: 2 April 2013
Number of Pages: 180
Institution: Università degli Studi di Napoli Federico II
Department: Ingegneria biomedica, elettronica e delle telecomunicazioni
Scuola di dottorato: Ingegneria dell'informazione
Dottorato: Ingegneria elettronica e delle telecomunicazioni
Ciclo di dottorato: 25
Coordinatore del Corso di dottorato:
nomeemail
Rinaldi, Niccolònirinald@unina.it
Tutor:
nomeemail
Irace, Andreaa.irace@unina.it
Date: 2 April 2013
Number of Pages: 180
Uncontrolled Keywords: Power Devices, IGBT, TCAD, Modeling, Avalanche Breakdown, Short-Circuit
Settori scientifico-disciplinari del MIUR: Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 - Elettronica
Aree tematiche (7° programma Quadro): TECNOLOGIE DELL'INFORMAZIONE E DELLA COMUNICAZIONE > Ambiente, energia e trasporti
Date Deposited: 09 Apr 2013 17:08
Last Modified: 23 Apr 2016 01:00
URI: http://www.fedoa.unina.it/id/eprint/9323

Abstract

The enormous increase of applications based on the control of electrical power, due to their low impact on environment, has increased the demand of semiconductor power devices with high reliability and efficiency. IGBTs are the most used power semiconductor devices for Middle/High power applications. In this work the design parameters which affect the ruggedness of IGBTs in forward and reverse conditions are analyzed. By means of both theoretical, simulative and experimental approaches the trade off between the on-state performances (voltage drop, turn-OFF losses and short-circuit capability) are defined and the guidelines to improve the robustness in avalanche conditions are reported. The inner physics and the terminal waveforms for large area IGBTs in avalanche conditions are investigated as well, by means of TCAD simulations and experimental characterizations.

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