De Filippis, Stefano (2013) Modeling, simulation and validation of the electro-thermal interaction in power MOSFETs. [Tesi di dottorato]

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Item Type: Tesi di dottorato
Lingua: English
Title: Modeling, simulation and validation of the electro-thermal interaction in power MOSFETs
Creators:
CreatorsEmail
De Filippis, Stefanostefano.defilippis@unina.it
Date: 2 April 2013
Number of Pages: 189
Institution: Università degli Studi di Napoli Federico II
Department: Ingegneria biomedica, elettronica e delle telecomunicazioni
Scuola di dottorato: Ingegneria dell'informazione
Dottorato: Ingegneria elettronica e delle telecomunicazioni
Ciclo di dottorato: 25
Coordinatore del Corso di dottorato:
nomeemail
Rinaldi, Niccolònirinald@unina.it
Tutor:
nomeemail
Irace, Andreaa.irace@unina.it
Nelhiebel, MichaelUNSPECIFIED
Košel, VladimírUNSPECIFIED
Date: 2 April 2013
Number of Pages: 189
Uncontrolled Keywords: Power MOSFET; Electro-thermal; FEM simulation
Settori scientifico-disciplinari del MIUR: Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 - Elettronica
Date Deposited: 09 Apr 2013 11:29
Last Modified: 31 Dec 2016 02:00
URI: http://www.fedoa.unina.it/id/eprint/9493

Abstract

Nowadays, power MOSFETs are massively used in most low and medium voltage power applications. Particularly, they are increasingly employed in automotive Smart Power switches enhancing energy efficiency, safety and comfort in latest generation cars. The electro-thermal interaction observed in power MOSFETs is the driving cause of thermal instability, which substantially limits their SOA, hence their robustness. A 3-D FEM-based electro-thermal simulation technique has been developed and implemented in order to predict device behavior under critical operating conditions experienced in the harsh automotive environment. Simulation requires an appropriate prior electro-thermal modeling of the device elementary cell. Experimental measurements with opportune test devices have been performed to validate the electro-thermal simulator. Furthermore, an innovative modeling strategy for the epitaxial layer of a trench power MOSFET has been developed and studied. Finally, the novel FEM tool has been profitably used to analyze currently relevant issues in modern power MOSFETs, such as the impact of their technological shrinking trend on device robustness.

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