Terracciano, Vincenzo (2025) Modeling and Experimental Investigation of Silicon Carbide MPS/JBS Diodes and Emerging Power Device Architectures. [Tesi di dottorato]

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The thesis is organized into two complementary research directions, devoted to the modelling and characterization of silicon carbide (SiC) power devices. The first concerns the development and validation of a lumped parameter electrothermal model, SPICE-compatible and geometrically scalable, for silicon carbide Merged PiN Schottky (MPS) diodes. The proposed circuit model accurately describes the forward conduction behaviour, including the dependence on temperature and geometry, self-heating effects, and the snapback phenomenon, as confirmed by TCAD simulations. Within the same research line, an experimental campaign has been carried out, followed by a failure analysis, on 1.2 kV SiC Junction Barrier Schottky (JBS) diodes, aimed at optimizing wire bonding at die level in order to increase the maximum current capability under surge current conditions. The second research direction introduces an innovative concept of 1.2 kV SiC Gate-All-Around (GAA) MOSFET, investigated through static, dynamic, and electrothermal mixed-mode TCAD simulations. The proposed cylindrically symmetric structure enables a uniform distribution of the electric field without the need for a dedicated termination region, thereby improving the trade-off between specific on-resistance and breakdown voltage. However, the 360◦ silicon dioxide insulation limits heat dissipation, making short-circuit events particularly critical. As a possible solution, the last part of the thesis investigates the integration, within the gate oxide, of a ferroelectric layer capable of limiting the current and the resulting self-heating during short-circuit transients.

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