Boccarossa, Marco (2024) Design Strategies and Material Integration for Enhancing Performance and Energy Efficiency in Advanced SiC MOSFETs. [Tesi di dottorato]

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Abstract

In recent years, the demand for efficient power management and energy conversion has surged across applications ranging from electric vehicles to renewable energy systems, driving the development of semiconductor power devices capable of high-voltage and high-temperature operation. Silicon carbide (SiC) has emerged as a leading material in this field, offering significant advantages in terms of thermal conductivity, switching speed, and reduced energy losses compared to traditional silicon devices. However, to fully realize the potential of SiC-based devices, further advancements are needed to enhance their reliability and efficiency under the harsh operating conditions typical of many power applications. This research addresses the need to enhance the reliability and efficiency of SiC MOSFETs in high-stress applications. In particular, I discuss several innovative MOSFET designs developed through TCAD simulations, which provide insights into the device physics and performance characteristics critical for achieving robust operation. My work initially focuses on optimizing existing device architectures, such as the quasi-planar trench (QPT) and superjunction (SJ) designs, to improve their performance in power electronics applications. Additionally, I investigate a novel approach to power device design: the use of ferroelectric materials as gate dielectrics, which presents potential improvements in device thermal stability and short-circuit capability. Together, these contributions represent a significant advancement toward achieving higher efficiency and reliability in next-generation power electronics.

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