Cavaiuolo, Domenico
(2015)
Compact Electro-thermal Modeling of IGBT for Application Circuit Effective Design.
[Tesi di dottorato]
| Tipologia del documento: |
Tesi di dottorato
|
| Lingua: |
English |
| Titolo: |
Compact Electro-thermal Modeling of IGBT for Application Circuit Effective Design |
| Autori: |
| Autore | Email |
|---|
| Cavaiuolo, Domenico | domenico.cavaiuolo@unina.it |
|
| Data: |
31 Marzo 2015 |
| Numero di pagine: |
163 |
| Istituzione: |
Università degli Studi di Napoli Federico II |
| Dipartimento: |
Ingegneria Elettrica e delle Tecnologie dell'Informazione |
| Scuola di dottorato: |
Ingegneria dell'informazione |
| Dottorato: |
Ingegneria elettronica e delle telecomunicazioni |
| Ciclo di dottorato: |
27 |
| Coordinatore del Corso di dottorato: |
| nome | email |
|---|
| Riccio, Daniele | daniele.riccio@unina.it |
|
| Tutor: |
| nome | email |
|---|
| Breglio, Giovanni | [non definito] |
|
| Data: |
31 Marzo 2015 |
| Numero di pagine: |
163 |
| Parole chiave: |
power semiconductor devices, power electronics, compact modeling, IGBT, parameters calibration |
| Settori scientifico-disciplinari del MIUR: |
Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 - Elettronica |
| Aree tematiche (7° programma Quadro): |
TECNOLOGIE DELL'INFORMAZIONE E DELLA COMUNICAZIONE > Trasporti, telecomunicazioni, attrezzature mediche, etc. Tecnologie della fotonica, plastiche elettroniche, display flessibili e micro e nano sistemi |
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| Depositato il: |
07 Apr 2015 11:02 |
| Ultima modifica: |
25 Set 2015 08:23 |
| URI: |
http://www.fedoa.unina.it/id/eprint/10291 |
| DOI: |
10.6092/UNINA/FEDOA/10291 |
Abstract
IGBTs are the most preferred power devices in medium power and frequency applications. Due to rapid developments of IGBT technology, the need of more accurate and reliable compact models within circuit simulators has become crucial for both device and circuit designers. Thus, an improved and optimized version of the Kraus NPT IGBT model has been developed and implemented within PSpice OrCad environment. The enhancements brought to the model have regarded the addition of some IGBT typical features such as PiN injection effect or avalanche breakdown as well as the definition of temperature dependencies of semiconductor physical constants to make model suitable for electro-thermal simulations. An automated parameters calibration procedure, based on curve-fitting method and implemented in MATLAB environment, has been proposed for definition of model parameters. Hence, the ET model has been validated by comparing simulation results with experimental measurements performed on laboratory test circuits of three different application scenarios. Finally, the Kraus model has been extended to modern Field-Stop IGBT technology by implementing in PSpice the approximated equations of FS layer.
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