Romano, Gianpaolo (2016) Study of Silicon Carbide Power MOSFETs Behaviour in Out-of-SOA Conditions. [Tesi di dottorato]

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Item Type: Tesi di dottorato
Lingua: English
Title: Study of Silicon Carbide Power MOSFETs Behaviour in Out-of-SOA Conditions
Creators:
CreatorsEmail
Romano, Gianpaologianpaolo.romano@unina.it
Date: 31 March 2016
Number of Pages: 121
Institution: Università degli Studi di Napoli Federico II
Department: Ingegneria Elettrica e delle Tecnologie dell'Informazione
Scuola di dottorato: Ingegneria dell'informazione
Dottorato: Ingegneria elettronica e delle telecomunicazioni
Ciclo di dottorato: 28
Coordinatore del Corso di dottorato:
nomeemail
Riccio, Danieledaniele.riccio@unina.it
Tutor:
nomeemail
Irace, AndreaUNSPECIFIED
Date: 31 March 2016
Number of Pages: 121
Uncontrolled Keywords: Silicon Carbide (SiC) Power MOSFETs; Power MOSFET failure analysis; short-circuit; thermal runaway;
Settori scientifico-disciplinari del MIUR: Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 - Elettronica
Date Deposited: 12 Apr 2016 22:10
Last Modified: 21 Feb 2017 02:00
URI: http://www.fedoa.unina.it/id/eprint/10682

Abstract

The need for efficient conversion and control of electrical power in many application areas has rapidly increased the demand for power devices with better and better performances. In order to go beyond the limit imposed by Silicon devices, there has always been a great interest for new materials. In recent years, Silicon Carbide Power devices, mainly power diodes and MOSFETs, have become commercially available and have begun to replace their Silicon counterpart in many application areas. The reason lays in some superior material properties that allow developing higher efficient power systems. Nevertheless, a wider spread of these devices could not be achieved without a deep analysis of the elements that might affect their reliability. The current work deals with the study of SiC Power MOSFETs reliability, with particular focus on short-circuit operation. To achieve this purpose, wide set of experiments has been carried out on commercially available devices, providing both electrical and thermal characterization. Alongside experimental evidences, TCAD simulations have been used to get a full understanding of the inner physical failure dynamics. Eventually, it has been possible to give explanation about SiC Power MOSFETs failure mechanisms. In particular, two different phenomena might occur and both are related to temperature increase inside the device.

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