Borghese, Alessandro (2022) Effect of parameters spread on the performance of sic power modules: derating rules and robustness issues. [Tesi di dottorato]
Anteprima |
Testo
Borgese_Alessandro_34.pdf Download (7MB) | Anteprima |
| Tipologia del documento: | Tesi di dottorato |
|---|---|
| Lingua: | English |
| Titolo: | Effect of parameters spread on the performance of sic power modules: derating rules and robustness issues |
| Autori: | Autore Email Borghese, Alessandro alessandro.borghese@unina.it |
| Data: | 31 Maggio 2022 |
| Numero di pagine: | 154 |
| Istituzione: | Università degli Studi di Napoli Federico II |
| Dipartimento: | Ingegneria Elettrica e delle Tecnologie dell'Informazione |
| Dottorato: | Information technology and electrical engineering |
| Ciclo di dottorato: | 34 |
| Coordinatore del Corso di dottorato: | nome email Riccio, Daniele daniele.riccio@unina.it |
| Tutor: | nome email Irace, Andrea [non definito] |
| Data: | 31 Maggio 2022 |
| Numero di pagine: | 154 |
| Parole chiave: | SiC MOSFET; power module; compact electrothermal modeling |
| Settori scientifico-disciplinari del MIUR: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 - Elettronica |
| Depositato il: | 22 Mag 2022 21:17 |
| Ultima modifica: | 28 Feb 2024 11:04 |
| URI: | http://www.fedoa.unina.it/id/eprint/14395 |
Abstract
The core of this manuscript is divided into the following chapters, each of which ends with a summary section to provide a quick reference to the corresponding main findings and results. Chapter 2 presents a compact model SiC power MOSFETs for performing fully-coupled electrothermal simulations entirely within SPICE environment. The equations governing its behavior in different operation domains are detailed and implemented through a SPICEcompatible subcircuit. In Chapter 3, the SiC MOSFET compact model is validated and its parameters are calibrated on target devices with breakdown voltage of 1.2 kV, 3.3 kV and 1.7 kV (the most common voltage classes for SiC MOSFETs currently on the market) to assess both the model accuracy and its scalability. The procedure for calibrating the parameters of the model is also illustrated. Chapter 4 investigates a type of short-circuit failure that is interesting for the parallel connection of SiC MOSFETs. This failure mode results in a MOSFET with a partial short circuit between gate and source but that still retains the capability of blocking the current between drain and source. Therefore, the failure type is referred to as fail to open (FTO). The impact of parameters spread on the electrothermal imbalances in parallel SiC MOSFETs is discussed in Chapter 5. Several relevant parameters, device- or assembly-related, are considered and, for each of them, the impact on the imbalance of static power dissipation, switching energy, and transient current sharing is studied. Exploiting Monte Carlo simulations, a procedure to derive a trade-off curve between the parameters spread and the temperature imbalance is also developed. Chapter 6 shows a simulation approach to build virtual prototypes of SiC-based power modules that can be entirely run in a SPICE-like environment. Several case-studies are developed to evaluate the electrothermal imbalance in multichip SiC power modules under realistic operating conditions.
Downloads
Downloads per month over past year
Actions (login required)
 |
Modifica documento |
