Marano, Ilaria (2008) Analytical modeling and numerical simulations of the thermal behavior of bipolar transistors. [Tesi di dottorato] (Unpublished)
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| Item Type: | Tesi di dottorato |
|---|---|
| Resource language: | English |
| Title: | Analytical modeling and numerical simulations of the thermal behavior of bipolar transistors |
| Creators: | Creators Email Marano, Ilaria ilaria.marano@unina.it |
| Date: | 29 November 2008 |
| Number of Pages: | 202 |
| Institution: | Università degli Studi di Napoli Federico II |
| Department: | Ingegneria biomedica, elettronica e delle comunicazioni |
| Dottorato: | Ingegneria elettronica e delle telecomunicazioni |
| Ciclo di dottorato: | 21 |
| Coordinatore del Corso di dottorato: | nome email Poggi, Giovanni UNSPECIFIED |
| Tutor: | nome email Rinaldi, Niccolò nirinald@unina.it |
| Date: | 29 November 2008 |
| Number of Pages: | 202 |
| Keywords: | Analytical modeling, bipolar transistor, numerical simulations, silicon-on-insulator, thermal resistance, trench isolation |
| Settori scientifico-disciplinari del MIUR: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 - Elettronica |
| Date Deposited: | 09 Nov 2009 10:33 |
| Last Modified: | 02 Dec 2014 11:33 |
| URI: | http://www.fedoa.unina.it/id/eprint/3138 |
| DOI: | 10.6092/UNINA/FEDOA/3138 |
Collection description
The thermal behavior of various bipolar transistor categories, namely, trench-isolated (1) SOI BJTs, (2) BJTs fabricated on silicon substrates, and (3) SiGe HBTs, is thorougly analyzed. Detailed 3-D numerical simulations are employed to provide a deep understanding of the thermal process in all the structures. Based on the numerical analysis, novel highly-effective analytical thermal models are conceived and developed for a fully predictive detection of the temperature field corresponding to an assigned dissipated power. All the models make use of simplified representations of the domains under analysis as well as 3rd-kind boundary conditions to describe the heat propagation through the insulating layers.
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