Marano, Ilaria (2008) Analytical modeling and numerical simulations of the thermal behavior of bipolar transistors. [Tesi di dottorato] (Unpublished)

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Item Type:	Tesi di dottorato
Resource language:	English
Title:	Analytical modeling and numerical simulations of the thermal behavior of bipolar transistors
Creators:	Creators Email Marano, Ilaria ilaria.marano@unina.it
Date:	29 November 2008
Number of Pages:	202
Institution:	Università degli Studi di Napoli Federico II
Department:	Ingegneria biomedica, elettronica e delle comunicazioni
Dottorato:	Ingegneria elettronica e delle telecomunicazioni
Ciclo di dottorato:	21
Coordinatore del Corso di dottorato:	nome email Poggi, Giovanni UNSPECIFIED
Tutor:	nome email Rinaldi, Niccolò nirinald@unina.it
Date:	29 November 2008
Number of Pages:	202
Keywords:	Analytical modeling, bipolar transistor, numerical simulations, silicon-on-insulator, thermal resistance, trench isolation
Settori scientifico-disciplinari del MIUR:	Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 - Elettronica
Date Deposited:	09 Nov 2009 10:33
Last Modified:	02 Dec 2014 11:33
URI:	http://www.fedoa.unina.it/id/eprint/3138
DOI:	10.6092/UNINA/FEDOA/3138

Collection description

The thermal behavior of various bipolar transistor categories, namely, trench-isolated (1) SOI BJTs, (2) BJTs fabricated on silicon substrates, and (3) SiGe HBTs, is thorougly analyzed. Detailed 3-D numerical simulations are employed to provide a deep understanding of the thermal process in all the structures. Based on the numerical analysis, novel highly-effective analytical thermal models are conceived and developed for a fully predictive detection of the temperature field corresponding to an assigned dissipated power. All the models make use of simplified representations of the domains under analysis as well as 3rd-kind boundary conditions to describe the heat propagation through the insulating layers.

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