Marano, Ilaria (2008) Analytical modeling and numerical simulations of the thermal behavior of bipolar transistors. [Tesi di dottorato] (Unpublished)

PDF (Tesi di dottorato di Ilaria Marano, DIBET, "Federico II")

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Item Type: Tesi di dottorato
Uncontrolled Keywords: Analytical modeling, bipolar transistor, numerical simulations, silicon-on-insulator, thermal resistance, trench isolation
Date Deposited: 09 Nov 2009 10:33
Last Modified: 30 Apr 2014 19:35


The thermal behavior of various bipolar transistor categories, namely, trench-isolated (1) SOI BJTs, (2) BJTs fabricated on silicon substrates, and (3) SiGe HBTs, is thorougly analyzed. Detailed 3-D numerical simulations are employed to provide a deep understanding of the thermal process in all the structures. Based on the numerical analysis, novel highly-effective analytical thermal models are conceived and developed for a fully predictive detection of the temperature field corresponding to an assigned dissipated power. All the models make use of simplified representations of the domains under analysis as well as 3rd-kind boundary conditions to describe the heat propagation through the insulating layers.

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