Marano, Ilaria (2008) Analytical modeling and numerical simulations of the thermal behavior of bipolar transistors. [Tesi di dottorato] (Unpublished)

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Item Type: Tesi di dottorato
Language: English
Title: Analytical modeling and numerical simulations of the thermal behavior of bipolar transistors
Creators:
CreatorsEmail
Marano, Ilariailaria.marano@unina.it
Date: 29 November 2008
Number of Pages: 202
Institution: Università degli Studi di Napoli Federico II
Department: Ingegneria biomedica, elettronica e delle comunicazioni
PHD name: Ingegneria elettronica e delle telecomunicazioni
PHD cycle: 21
PHD Coordinator:
nameemail
Poggi, GiovanniUNSPECIFIED
Tutor:
nameemail
Rinaldi, Niccolònirinald@unina.it
Date: 29 November 2008
Number of Pages: 202
Uncontrolled Keywords: Analytical modeling, bipolar transistor, numerical simulations, silicon-on-insulator, thermal resistance, trench isolation
MIUR S.S.D.: Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 - Elettronica
Date Deposited: 09 Nov 2009 10:33
Last Modified: 02 Dec 2014 11:33
URI: http://www.fedoa.unina.it/id/eprint/3138

Abstract

The thermal behavior of various bipolar transistor categories, namely, trench-isolated (1) SOI BJTs, (2) BJTs fabricated on silicon substrates, and (3) SiGe HBTs, is thorougly analyzed. Detailed 3-D numerical simulations are employed to provide a deep understanding of the thermal process in all the structures. Based on the numerical analysis, novel highly-effective analytical thermal models are conceived and developed for a fully predictive detection of the temperature field corresponding to an assigned dissipated power. All the models make use of simplified representations of the domains under analysis as well as 3rd-kind boundary conditions to describe the heat propagation through the insulating layers.

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