Costagliola, Maurizio (2013) ANALYSIS AND EXPERIMENTAL CHARACTERIZATION OF SAFE OPERATING AREA OF SIGE HETEROJUNCTION BIPOLAR TRANSISTOR. [Tesi di dottorato]

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Item Type: Tesi di dottorato
Lingua: English
Title: ANALYSIS AND EXPERIMENTAL CHARACTERIZATION OF SAFE OPERATING AREA OF SIGE HETEROJUNCTION BIPOLAR TRANSISTOR
Creators:
CreatorsEmail
Costagliola, Mauriziomaurizio.costagliola@unina.it
Date: 2 April 2013
Number of Pages: 134
Institution: Università degli Studi di Napoli Federico II
Department: Ingegneria biomedica, elettronica e delle telecomunicazioni
Scuola di dottorato: Ingegneria dell'informazione
Dottorato: Ingegneria elettronica e delle telecomunicazioni
Ciclo di dottorato: 25
Coordinatore del Corso di dottorato:
nomeemail
Rinaldi, Niccolònirinald@unina.it
Tutor:
nomeemail
Rinaldi, Niccolònirinald@unina.it
Date: 2 April 2013
Number of Pages: 134
Uncontrolled Keywords: pinch-in, SOA, HBT
Settori scientifico-disciplinari del MIUR: Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 - Elettronica
Aree tematiche (7° programma Quadro): TECNOLOGIE DELL'INFORMAZIONE E DELLA COMUNICAZIONE > Trasporti, telecomunicazioni, attrezzature mediche, etc. Tecnologie della fotonica, plastiche elettroniche, display flessibili e micro e nano sistemi
Date Deposited: 09 Apr 2013 17:11
Last Modified: 31 Dec 2016 02:00
URI: http://www.fedoa.unina.it/id/eprint/9423

Abstract

In Chapter 1, a brief introduction to state-of-the-art SiGe heterostructure bipolar transistors and its evolution is described. The main junction breakdown phenomena are presented. Finally, an overview on trade-offs in the design of this kind of devices is provided. In Chapter 2, a new 2D theoretical model for the bipolar transistor operation under reversal base current conditions is presented. In this operating condition the focusing of the current in the central area of the intrinsic base region limits the Safe Operating Area. A detailed study on the behavior of the bipolar transistor above the open-base breakdown voltage has defined a partial differential equation numerically solved by a finite element software package. The analysis has been extended to include the emitter resistance contribution and high injection effects. By means of this model, the cause of instabilities occurring in the common base output characteristics has been clarified. In Chapter 3, the description of a complete characterization of state-of-the-art SiGe HBT devices is reported. The measurements have been totally realized in department laboratories. In Chapter 4, a new technique for the base resistance extraction of bipolar transistor is presented. This method is the first in literature to capture the bias dependence of the base resistance of modern devices. The new extraction strategy has been applied to STM and Infineon SiGe HBT. The good accuracy of the extraction is demonstrated. In Chapter 5, the design, realization and characterization of an in-house pulse generator required for isothermal characterization is described. Main features and specifications of the proposed system are highlighted. The pulser has been successfully adopted for the characterization of packaged power BJTs and MOS transistors, as well as of on-wafer SiGe:C HBTs.

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