Salvato, Raffaele (0202) Compact HICUM Modeling of Distributed Dynamic Lateral Effects in SiGe HBTs During Large-Signal Switching. [Tesi di dottorato]

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Item Type: Tesi di dottorato
Lingua: English
Title: Compact HICUM Modeling of Distributed Dynamic Lateral Effects in SiGe HBTs During Large-Signal Switching
Creators:
CreatorsEmail
Salvato, Raffaeleraffaele.salvato@unina.it
Date: 11 March 0202
Number of Pages: 104
Institution: Università degli Studi di Napoli Federico II
Department: Ingegneria Elettrica e delle Tecnologie dell'Informazione
Dottorato: Information technology and electrical engineering
Ciclo di dottorato: 32
Coordinatore del Corso di dottorato:
nomeemail
Riccio, Danieledaniele.riccio@unina.it
Tutor:
nomeemail
d'Alessandro, VincenzoUNSPECIFIED
Date: 11 March 0202
Number of Pages: 104
Uncontrolled Keywords: HICUM, Modeling, ECC Effects
Settori scientifico-disciplinari del MIUR: Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 - Elettronica
Date Deposited: 05 Apr 2020 15:00
Last Modified: 10 Nov 2021 09:57
URI: http://www.fedoa.unina.it/id/eprint/13072

Abstract

In this thesis, a description of the lateral dynamic ECC occurring in fast large-signal switching with a 1-transistor (1-T) compact model employing lateral charge partitioning around the internal base resistance was made. Then a procedure for determining the lateral charge partitioning factor in turn-on switching processes is presented based on 2-D mixed-mode circuit-device simulation and a distributed 10-transistor (10-T) compact model serving as reference. The purpose of this work is to explore whether fast large-signal switching can be described sufficiently accurately and computationally efficiently with a 1-transistor model.

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