Salvato, Raffaele (0202) Compact HICUM Modeling of Distributed Dynamic Lateral Effects in SiGe HBTs During Large-Signal Switching. [Tesi di dottorato]
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| Item Type: | Tesi di dottorato |
|---|---|
| Resource language: | English |
| Title: | Compact HICUM Modeling of Distributed Dynamic Lateral Effects in SiGe HBTs During Large-Signal Switching |
| Creators: | Creators Email Salvato, Raffaele raffaele.salvato@unina.it |
| Date: | 11 March 0202 |
| Number of Pages: | 104 |
| Institution: | Università degli Studi di Napoli Federico II |
| Department: | Ingegneria Elettrica e delle Tecnologie dell'Informazione |
| Dottorato: | Information technology and electrical engineering |
| Ciclo di dottorato: | 32 |
| Coordinatore del Corso di dottorato: | nome email Riccio, Daniele daniele.riccio@unina.it |
| Tutor: | nome email d'Alessandro, Vincenzo UNSPECIFIED |
| Date: | 11 March 0202 |
| Number of Pages: | 104 |
| Keywords: | HICUM, Modeling, ECC Effects |
| Settori scientifico-disciplinari del MIUR: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 - Elettronica |
| Date Deposited: | 05 Apr 2020 15:00 |
| Last Modified: | 10 Nov 2021 09:57 |
| URI: | http://www.fedoa.unina.it/id/eprint/13072 |
Collection description
In this thesis, a description of the lateral dynamic ECC occurring in fast large-signal switching with a 1-transistor (1-T) compact model employing lateral charge partitioning around the internal base resistance was made. Then a procedure for determining the lateral charge partitioning factor in turn-on switching processes is presented based on 2-D mixed-mode circuit-device simulation and a distributed 10-transistor (10-T) compact model serving as reference. The purpose of this work is to explore whether fast large-signal switching can be described sufficiently accurately and computationally efficiently with a 1-transistor model.
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