Salvato, Raffaele
(0202)
Compact HICUM Modeling of Distributed Dynamic Lateral Effects in SiGe HBTs During Large-Signal Switching.
[Tesi di dottorato]
| Item Type: |
Tesi di dottorato
|
| Lingua: |
English |
| Title: |
Compact HICUM Modeling of Distributed Dynamic Lateral Effects in SiGe HBTs During Large-Signal Switching |
| Creators: |
| Creators | Email |
|---|
| Salvato, Raffaele | raffaele.salvato@unina.it |
|
| Date: |
11 March 0202 |
| Number of Pages: |
104 |
| Institution: |
Università degli Studi di Napoli Federico II |
| Department: |
Ingegneria Elettrica e delle Tecnologie dell'Informazione |
| Dottorato: |
Information technology and electrical engineering |
| Ciclo di dottorato: |
32 |
| Coordinatore del Corso di dottorato: |
| nome | email |
|---|
| Riccio, Daniele | daniele.riccio@unina.it |
|
| Tutor: |
| nome | email |
|---|
| d'Alessandro, Vincenzo | UNSPECIFIED |
|
| Date: |
11 March 0202 |
| Number of Pages: |
104 |
| Uncontrolled Keywords: |
HICUM, Modeling, ECC Effects |
| Settori scientifico-disciplinari del MIUR: |
Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 - Elettronica |
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| Date Deposited: |
05 Apr 2020 15:00 |
| Last Modified: |
10 Nov 2021 09:57 |
| URI: |
http://www.fedoa.unina.it/id/eprint/13072 |
Abstract
In this thesis, a description of the lateral dynamic ECC occurring in fast large-signal switching with a 1-transistor (1-T) compact model employing lateral charge partitioning around the internal base resistance was made. Then a procedure for determining the lateral charge partitioning factor in turn-on switching processes is presented based on 2-D mixed-mode circuit-device simulation and a distributed 10-transistor (10-T) compact model serving as reference. The purpose of this work is to explore whether fast large-signal switching can be described sufficiently accurately and computationally efficiently with a 1-transistor model.
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